1 / 9 n ??? n - channel mosfet j cs 1 h n60 b order codes ? marking ? package halogen free ? packaging d evice w eight jcs1 h n60 t b - o - t - n - a jcs1 h n60 t b to - 92 no brede 0.216 g(typ) jcs1hn60t b - r - t - n - a jcs1hn60t b to - 92 yes no brede 0.216 g(typ) ? package ? main characteristics i d 0.5 a to - 92 v dss 6 00 v rdson @vgs=10v 15 ? qg 3 . 6 nc ? ? ??? ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half brid ge ? ? ? ? c rss ( ? 3. 2 pf ) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 3. 2 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order message r
jcs 1 h n 60 b 20 1 6 07 a 2 / 9 ?? absolute ratings (tc=25 ) ? parameter symbol ? value unit jcs1hn60t ???? drain - source voltage v dss 600 v ? drain current - continuous i d t=25 t=100 0.5 a 0.31 a ? ? 1 drain current - pulse note 1 i dm 2.0 a ??? gate - source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 47 mj ? ? 1 avalanche current note 1 i ar 1.0 a ?? ? 1 repetitive avalanche current note 1 e ar 3. 0 mj ??? ? 3 peak diode recovery dv/dt note 3 dv/dt 4.2 4.2 v/ns ? power dissipation p d t c =25 - derate above 25 3.0 30 w 0. 02 5 0.24 w/ ??? operating and storage temperature range t j t stg - 55 +150 ?? maximum lead temperature for s oldering purposes t l 300 r
jcs 1 h n 60 b 20 1 6 07 a 3 / 9 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v g s =0v 6 00 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d = 1m a, referenced to 25 - 0. 6 0 - v/ ???? zero gate voltage drain current i dss v ds = 6 00v,v gs =0v, t c =25 - - 1 0 a v ds = 48 0v, t c =125 - - 1 0 0 a ?? gate - body lea kage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4 .0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 0. 5 a - 11 15 ? forward transconductance g fs v ds = 4 0v , i d = 0. 5 note 4 - 0. 6 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 260 2 90 pf output capacitanc e c oss - 22 2 8 pf reverse transfer capacitance c rss - 3. 2 4 . 8 pf r
jcs 1 h n 60 b 20 1 6 07 a 4 / 9 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 30 0v,i d = 1. 0 a,r g =25? note 4 5 - 1 2 38 ns ? turn - on rise time t r - 4 6 10 2 ns ?? turn - off delay time t d (off) - 2 2 58 ns ?? turn - off fall time t f - 3 9 8 5 ns ? total gate charge q g v ds = 48 0v , i d = 1. 0 a v gs =10v note 4 5 - 3 . 6 4 .2 nc ?? gate - source charge q gs - 0 . 7 - nc ?? gate - drain charge q gd - 1 . 7 - nc ????? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 1. 0 a maximum pulsed drain - source diode forward current i sm - - 4 .0 a ? drain - source dio de forward voltage v sd v gs =0v, i s = 1. 0 a - - 1. 0 v ?? reverse recovery time t rr v gs =0v, i s = 1. 0 a di f /dt=100a/ s (note 4) - 1 85 - ns ? reverse recovery charge q rr - 0. 51 - c ? parameter symbol max unit jcs 1 h n60 tb ??? thermal resistance, junction to case r th(j - c) /w ? thermal resistance, junction to ambient r th(j - a) 120 /w ? ? 1 ? 2 l = 59 mh, i as = 1. 0 a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 1. 0 a,di/dt 2 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 59 mh, i as = 1. 0 a, v dd =50v, r g =25 ? , starting t j =25 3 i sd 1. 0 a,d i/dt 2 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature r
jcs 1 h n 60 b 20 1 6 07 a 5 / 9 electrical characteristics (curves) t ransfer characteristics o n - resistance variation vs. drain current and gate voltage b ody diode forward voltage variation vs. source current and temperature c apacitance characteristics gate charge characteristics o n - region characteristics r 0.1 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25 150 v sd [v] i dr [a] 1 10 0.1 1 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i ds (on ) [a] v ds [v] 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v i d [a] v gs [v] 25 150 0 2 4 6 8 10 0 1 2 3 4 5 6 7 v ds =120v v ds =300v v ds =480v q g toltal gate charge [nc] v gs gate source voltage[v] 0.0 0.5 1.0 1.5 2.0 10 11 12 13 14 15 16 note t j =25 v gs =10v r ds (on ) [ ] i d [a] v gs =20v
jcs 1 h n 60 b 20 1 6 07 a 6 / 9 electrical characteristics (curves) b reakdown voltag e variation vs. temperature o n - resistance variation vs. temperature maximum safe operating area for jcs 1 h n60 t m aximum drain current vs. case temperature r -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v gs =0v 2. i d =250 ? a bv ds (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =0.5a r d(on ) (normalized) t j [ ]
jcs 1 h n 60 b 20 1 6 07 a 7 / 9 electrical characteristics (curves) transient thermal response curve for jcs 1 h n6 0 t b notes : 1. z j a (t) = r(t) * r ja 2. duty factor, d=t1/t2 3. t jm C t a = p dm * z j a (t) r 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 0.01 0.1 1 0.5 single pulse 0.01 0.02 0.05 0.2 0.1 r(t) (normalized) t1 [ms]
jcs 1 h n 60 b 20 1 6 07 a 8 / 9 ? pa ckage mechanical data to - 9 2 u nit mm r
jcs 1 h n 60 b 20 1 6 07 a 9 / 9 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ? ???? ?????? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circ uit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 : 86 - 432 - 6 4671533 c ontact jilin sino - microelectronics co., ltd. a dd: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn m arket d epartment add: no.99 shenzhen street, jilin city, jilin provi nce, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 fax: 86 - 432 - 6 4671533 r
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